Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers |
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| Authors: | S Ridene M Debbichi M Saïd H Bouchriha |
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| Institution: | 1.Laboratoire : Matériaux avancés et phénomènes quantique, Faculté des Sciences de Tunis,Université de Tunis El Manar, Campus Universitaire,Tunis,Tunisia;2.Département de Physique, Faculté des Sciences de Bizerte,Université de Carthage,Jarzona,Tunisia;3.Département de Physique, Faculté des Sciences de Monastir,Unité de Recherche de Physique des Solides,Monastir,Tunisia |
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| Abstract: | We have investigated the effects of nitrogen N concentration on the properties of hole subbands and effective mass in dilute-nitride
type-II InAsN/GaSb laser diodes on InAs substrate with “W” design. Using a 5-bands k·p model, we obtained interesting numerical results for the heavy-hole (hh) and the light-hole (lh) subbands. The hole effective
masses were found to be very sensitive to the nitrogen concentration and to the differences in the Luttinger parameters between
the well and the barrier. In addition, the hole effective masses are found to be strongly affected by band-anticrossing (BAC)
model. |
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