Current controlled negative resistance phenomenon in SbPbSe system

Thin film Al/Sb₂Pb₁Se₇/Al metal-glass-metal sandwiched structures prepared using thermal evaporation technique have been studied. The I–V measurements showed that the devices switched from high resistance OFF state to a low resistance ON state when a particular voltage appeared across it. The OFF state I–V characteristics showed non-ohmic behaviour while in the ON state the devices displayed purely linear characteristics. The switching voltage (V _th) was found to depend on film thickness and temperature of the device. A linear relation between V_th and temperature was observed.