| 量子垒高度对深紫外LED调制带宽的影响 |
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| 引用本文： | 郭亮,郭亚楠,羊建坤,闫建昌,王军喜,魏同波.量子垒高度对深紫外LED调制带宽的影响[J].发光学报,2022,43(1):1-7. |
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| 作者姓名： | 郭亮 郭亚楠 羊建坤 闫建昌 王军喜 魏同波 |
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| 作者单位： | 中国科学院半导体研究所 半导体照明研发中心, 北京 100083;中国科学院大学 材料与光电研究中心, 北京 100049 |
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| 基金项目： | 国家重点研发计划(2017YFB0404104);国家自然科学基金(61974139);北京自然科学基金(4182063)资助项目。 |
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| 摘 要： | AlGaN基深紫外LED由于具有高调制带宽和小芯片尺寸,在紫外光通信领域受到越来越多的关注.本研究通过改变生长AlGaN量子垒层的Al源流量,生长了三种具有不同量子垒高度的深紫外LED,研究了量子垒高度对深紫外LED光电特性和调制特性的影响.研究发现,随着量子垒高度的增加,深紫外LED的光功率出现先增加后减小的趋势,量...
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| 关 键 词： | 紫外光通信 深紫外发光二极管 多量子阱层 调制带宽 发光功率 |
Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes |
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| GUO Liang,GUO Ya-nan,YANG Jian-kun,YAN Jian-chang,WANG Jun-xi,WEI Tong-bo.Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes[J].Chinese Journal of Luminescence,2022,43(1):1-7. |
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| Authors: | GUO Liang GUO Ya-nan YANG Jian-kun YAN Jian-chang WANG Jun-xi WEI Tong-bo |
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| Institution: | (Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) |
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| Abstract: | AlGaN-based deep ultraviolet LED has attracted more and more attention in ultraviolet communication due to its high modulation bandwidth and small chip size.In this study,AlGaN-based deep ultraviolet LEDs with varied Al composition of 50%,55%,60%in quantum barriers are fabricated.The effect of barrier height on the photoelectric and modulation characteristics of deep ultraviolet LEDs is studied.It is found that the optical power and external quantum efficiency(EQE)of the deep ultraviolet LED increase first and then decreased,and carrier lifetime decreases first and then increases as the quantum barrier height increases.The peak wavelength of the spectra shows a blue-shift.APSYS simulation revealed that the spacial overlap between the wave function of electron and hole is enhanced as Al composition increases.But further increase on barrier height will lead to current leakage which reduces the radiation recombination rate and carrier density in multi-quantum well layer.The-3 dB bandwidth of deep ultraviolet LED with 55%Al composition in quantum barrier is measured to be 94.4 MHz,higher than those with 50%and 60%Al composition in quantum barrier. |
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| Keywords: | ultraviolet communication deep ultraviolet light-emitting diodes multiple-quantum-well layer modulation bandwidth optical power |
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