The study of native defects in as-grown GaAs by positron annihilation |
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| Authors: | S. Fujii A. Uedono S. Tanigawa |
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| Affiliation: | (1) Opto-Electronics R&D Laboratories, Sumitomo Electric Industries Ltd., 1 Taya-cho, Sakae-ku, 244 Yokohama, Japan;(2) Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153 Tokyo, Japan;(3) Institute of Materials Science, University of Tsukuba, 305 Tsukuba, Ibaraki, Japan |
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| Abstract: | A mono-energetic positron beam was applied for a study of native defects in GaAs. From measurements of Doppler broadening profiles and lifetime spectra of positrons, it was found that Ga-vacancies were introduced by Si-doping. On the other hand, for p-type GaAs, interstitial clusters were found to be introduced by Zn-doping. The observed species of defects are in agreement with those expected from the Fermi level. |
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