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Carrier-induced ferromagnetic order in the narrow gap III–V magnetic alloy semiconductor (In,Mn)Sb |
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| Authors: | S Yanagi K Kuga T Slupinski H Munekata |
| Institution: | a Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;b Science and Technical Research Laboratories, Japan Broadcasting Corporation, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan;c Institute of Experimental Physics, Warsaw University, Hoza 69,00-681, Warsaw, Poland |
| Abstract: | Preparation and physical properties of p- and n-InMnSb epitaxial films with Mn contents up to 10% were studied with the aim of seeking phenomena induced by the spin exchange interaction between carrier and Mn spins. For p-type samples with Mneff=4.5×1020 and p=1.1×1020 cm−3, carrier-induced ferromagnetic order with a Curie temperature of 20 K was observed. The sign of the anomalous Hall coefficient is found to be negative. Tellurium-doped n-type samples (n=8.6×1018 cm−3) with net Mn contents of 10% are found to be paramagnetic. |
| Keywords: | III– V magnetic alloy semiconductors Carrier-induced magnetism Molecular beam epitaxy Spintronics |
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