| EEPROM和SRAM瞬时剂量率效应比较 |
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| 引用本文： | 王桂珍,林东生,齐 超,白小燕,杨善超,李瑞宾,马 强,金晓明,刘 岩.EEPROM和SRAM瞬时剂量率效应比较[J].微电子学,2014(4):510-514. |
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| 作者姓名： | 王桂珍 林东生 齐 超 白小燕 杨善超 李瑞宾 马 强 金晓明 刘 岩 |
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| 作者单位： | 西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室; |
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| 摘 要： | 对一种256 kb EEPROM电路AT28C256和一种256 kb SRAM电路HM62256开展了"强光一号"瞬时剂量率效应实验,测量了存储器的闩锁效应、翻转效应等。HM62256的翻转阈值为9.0×106 Gy(Si)/s,闩锁阈值高于5.4×107 Gy(Si)/s。AT28C256的闩锁阈值为2×107 Gy(Si)/s,存储单元翻转阈值高于3.0×108 Gy(Si)/s。对于SRAM,其翻转阈值远低于闩锁阈值;而对于EEPROM,在瞬时辐照下,闩锁阈值远低于存储单元的翻转阈值。基于两种存储器的数据存储原理,分析了SRAM和EEPROM瞬时剂量率效应差异的原因。
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| 关 键 词： | 浮栅器件 EEPROM SRAM 剂量率 闩锁阈值 翻转阈值 |
Comparison of Transient Radiation Effect Between EEPROM and SRAM |
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| WANG Guizhen,LIN Dongsheng,QI Chao,BAI Xiaoyan,YANG Shanchao,LI Ruibin,MA Qiang,JIN Xiaoming,LIU Yan.Comparison of Transient Radiation Effect Between EEPROM and SRAM[J].Microelectronics,2014(4):510-514. |
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| Authors: | WANG Guizhen LIN Dongsheng QI Chao BAI Xiaoyan YANG Shanchao LI Ruibin MA Qiang JIN Xiaoming LIU Yan |
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| Abstract: | AT28C256 is a kind of floating gate electrically erasable programmable read only memory and HM62256 is a kind of static random memory. Transient dose rate effects are studied for AT28C256 and HM62256 using Qiangguang-1 accelerator. The AT28C256 was found to be susceptible to dose rate latchup and average latchup level is 1.9×107 Gy(Si)/s. Following 3.0×108 Gy(Si)/s, memory contents were retained and memory can erasure and program exactly in AT28C256. HM62256 was found to be susceptible to upset and average upset level is 0.9×107 Gy(Si)/s. Following 5.4×107 Gy(Si)/s, no latchup was happened in HM62256. Differences in memory structures and mechanism to store data are the causes for difference of transient radiation effects between EEPROMs and SRAMs. |
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| Keywords: | Floating gate device EEPROM SRAM Dose rate Latchup level Upset level |
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