采用扫描电镜的ECP技术分析人工合成金刚石晶体中的晶体缺陷

本文应用扫描电镜的ＥＣＰ技术对人造金刚石晶体表面的位错密度，进行了实验分析，并同位错蚀坑分析技术的测量结果进行了比较，结果表明，如采用临界束流强度作为描述ＥＣＰ本征衬度的参数，则它同位错密度间存在明显定量的数学关系，因此上述临界束流强度可用来评价晶体中位错密度的相对变化。

Evalution of the Crystal Defects in Synthetic Diamond by ECP Technique of SEM

By comparing with the results obtained from etch pits technique,the measurements of the dislocation densi-ty of the diamond crystal have been made by ECP technique of SEM.With the aid of the parameter such as the critical current intensity to reveal the ECP intrinsic contrast of thecrystal defect, the experimental results indicate that the relationship between the critical current intensity andthe dislocation density can be quantitatively expressed with an empirical equation. Owing to the above reson,itis concluded that the crittcal current intensity suits to evaluate the variance of the crystal defects.