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Identifying the electronic properties of the Ge(111)-(2×1) surface by low-temperature scanning tunneling microscopy
Authors:P. I. Arseyev  N. S. Maslova  V. I. Panov  S. V. Savinov  C. Van Haesendonck
Affiliation:(1) Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia;(2) Faculty of Physics, Moscow State University, Moscow, 119992, Russia;(3) Laboratory of Solid-State Physics and Magnetism, K.U. Leuven, B-3001 Leuven, Belgium
Abstract:We present the results of our low-temperature scanning tunneling microscopy (STM) investigation of the clean Ge(111) surface. Our experiments enable, for the first time, STM observation of one-dimensional surface screening around surface defects. We identify the dominating role of surface states in the low-temperature STM imaging as well as the important influence of nonequilibrium kinetics on the measured tunneling spectra.
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