"Seamless" graphene interconnects for the prospect of all-carbon spin-polarized field-effect transistors |
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Authors: | Agapito Luis A Kioussis Nicholas |
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Institution: | Department of Physics and W. M. Keck Computational Materials Theory Center, California State University Northridge, Northridge, CA 91330, USA. |
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Abstract: | Magnetism in graphene nanofragments arises from the spin polarization of the edge-states; consequently, as the material inexorably shrinks, magnetism will become a dominant feature whereas the bulk carrier mobility will be less relevant. We have carried out an ab initio study of the role of graphene-ultra-nanofragment magnetism on electronic transport. We present, as a proof-of-concept, a nanoscopic spin-polarized field-effect transistor (FET) with the channel and metallic contacts carved from a single graphene sheet. We demonstrate the selective tuning of conductance through electric-field control of the magnetic, rather than the charge, degrees of freedom of the channel, the latter typically employed in microscopic graphene FETs. |
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