Study of elemental and phase composition of PZT thin films by auger depth profiling |
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| Authors: | V G Beshenkov V A Marchenko A G Znamenskii |
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| Institution: | 1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Institutskaya ul. 6, Chernogolovka, Moscow oblast, 142432, Russia
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| Abstract: | The composition of PZT thin films deposited by diode HF sputtering of a ceramic target on Pt/Ti/SiO2/Si substrates was studied. The remanent polarization of grown films was to 22 μC/cm2. A technique for verifying the adequacy of elemental and phase composition of thin films to the ferroelectric phase composition was proposed. The problems of reliable contact of Pt electrodes with the PZT layer were considered. |
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