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Some new fundamental properties of GaN single-crystal films on SiC and sapphire substrates |
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| Authors: | M. A. Jacobson D. K. Nelson Yu. V. Melnik A. V. Selkin |
| Affiliation: | 1. A. F. Ioffe Physical-Technical Institute and Cree Research EED, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia |
| Abstract: | |
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