Raman spectra of carriers in ionic-liquid-gated transistors fabricated with poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) |
| |
| Affiliation: | 1. Department of Chemistry and Biochemistry, Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku-ku, Tokyo 169-8555, Japan;2. Department of Advanced Science and Engineering, Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku-ku, Tokyo 169-8555, Japan;1. Institute of Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic;2. Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo náměstí 2, 166 10 Prague 6, Czech Republic;1. Department of Neurobiology, Institute of Pharmacology, Polish Academy of Sciences, Smętna 12, 31-343 Kraków, Poland;2. Faculty of Foundry Engineering, AGH University of Science and Technology, ul. Reymonta 23, 30-059 Kraków, Poland;3. Institute of Nuclear Physics, Polish Academy of Science, 31-342 Krakow, Poland;4. Faculty of Chemistry, Jagiellonian University, ul. Ingardena 3, 30-060 Kraków, Poland;5. Department of Chemistry, Hankuk University of Foreign Studies, Yongin, Kyunggi-Do, 449-791, South Korea;1. Faculty of Chemistry, Jagiellonian University, Ingardena 3, 30-060 Kraków, Poland;2. Frank Laboratory of Neutron Physics, JINR, 141980 Dubna, Russia;1. Graphene Research Institute, Sejong University, Seoul 143-747, South Korea;2. Faculty of Nanotechnology & Advanced Materials Engineering, Sejong University, Seoul 143-747, South Korea;3. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, South Korea;4. Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, South Korea;5. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejon 305-600, South Korea |
| |
| Abstract: | We observed the Raman spectra of carriers, positive polarons and bipolarons, generated in a poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) film by FeCl3 vapor doping. Electrical conductivity and Raman measurements indicate that the dominant carriers in the conducting state were bipolarons. We identified positive polarons and bipolarons generated in an ionic-liquid-gated transistor (ILGT) fabricated with PBTTT-C14 as an active semiconductor and an ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide [BMIM][TFSI] as a gate dielectric using Raman spectroscopy. The relationship between the source−drain current (ID) at a constant source−drain voltage (VD) and the gate voltage (VG) was measured. ID increased above −VG = 1.1 V and showed a maximum at −VG = 2.0 V. Positive polarons were formed at the initial stage of electrochemical doping (−VG = 0.8 V). As ID increased, positive bipolarons were formed. Above VG = −2.0 V, bipolarons were dominant. The charge density (n), the doping level (x), and the mobility of the bipolarons were calculated from the electrochemical measurements. The highest mobility (μ) of bipolarons was 0.72 cm2 V−1 s−1 at x = 110 mol%/repeating unit (−VG = 2.0 V), whereas the highest μ of polarons was 4.6 × 10−4 cm2 V−1 s−1 at x = 10 mol%. |
| |
| Keywords: | Raman Ionic liquid Organic transistor PBTTT Polaron Bipolaron |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
