首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Dopant-Induced Electronic States Regulation Boosting Electroreduction of Dilute Nitrate to Ammonium
Authors:Prof Lu-Hua Zhang  Yangting Jia  Jiayu Zhan  Guomeng Liu  Dr Guanhua Liu  Prof Fei Li  Prof Fengshou Yu
Institution:1. National-Local Joint Engineering Laboratory for Energy Conservation in Chemical Process Integration and Resources Utilization, School of Chemical Engineering and Technology, Hebei University of Technology, 300130 Tianjin, P.?R. China;2. National-Local Joint Engineering Laboratory for Energy Conservation in Chemical Process Integration and Resources Utilization, School of Chemical Engineering and Technology, Hebei University of Technology, 300130 Tianjin, P.?R. China

These authors contributed equally to this work.;3. State Key Laboratory of Fine Chemicals, Dalian University of Technology, 116024 Dalian, P.?R. China

Abstract:Electrochemically converting NO3? into NH3 offers a promising route for water treatment. Nevertheless, electroreduction of dilute NO3? is still suffering from low activity and/or selectivity. Herein, B as a modifier was introduced to tune electronic states of Cu and further regulate the performance of electrochemical NO3? reduction reaction (NO3RR) with dilute NO3? concentration (≤100 ppm NO3??N). Notably, a linear relationship was established by plotting NH3 yield vs. the oxidation state of Cu, indicating that the increase of Cu+ content leads to an enhanced NO3?-to-NH3 conversion activity. Under a low NO3??N concentration of 100 ppm, the optimal Cu(B) catalyst displays a 100 % NO3?-to-NH3 conversion at ?0.55 to ?0.6 V vs. RHE, and a record-high NH3 yield of 309 mmol h?1 gcat?1, which is more than 25 times compared with the pristine Cu nanoparticles (12 mmol h?1 gcat?1). This research provides an effective method for conversion of dilute NO3? to NH3, which has certain guiding significance for the efficient and green conversion of wastewater in the future.
Keywords:Cu-Based Catalysts  Dilute Concentration  Electrochemical NO3? Reduction  Electronic States  Modifier Element B
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号