Electron microscopy of epitaxial structures of pseudobinary A III B V solid solutions and the model of nonequilibrium ordering in epitaxial growth

The results of the electron microscopy studies of self-modulated GaAlAs, GaAsP, and InGaP layers have been generalized, and the laws governing the self-oscillatory growth of these materials have been formulated. The growth characteristics under the autocatalysis conditions were established from a computer simulation of the epitaxial process. It is demonstrated that the autocatalytic model of crystallization corresponds to the experimental characteristics of self-modulation. The anomalies in electron microscopy images of the boundaries were revealed, which can be interpreted only with the invocation of the autocatalytic model. The reliabilities of various theoretical self-modulation models are also discussed.