Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products |
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Authors: | H. -X. Wan J. H. Moore J. K. Olthoff R. J. Van Brunt |
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Affiliation: | (1) Department of Chemistry and Biochemistry, University of Maryland, 20742 College Park, Maryland;(2) National Institute of Standards and Technology, 20899 Gaithersburg, Maryland |
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Abstract: | Discrete electron-molecule processes relevant to SF6 etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF6, SO2, SOF2, SO2F2, SOF4, and SF4, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF6 by-products in SF6. |
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Keywords: | Attachment rates cross section dissociative attachment electron scattering SF6, SF4, SO2, SOF2, SOF4, SO2F2 |
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