Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products |
| |
| Authors: | H -X Wan J H Moore J K Olthoff R J Van Brunt |
| |
| Institution: | (1) Department of Chemistry and Biochemistry, University of Maryland, 20742 College Park, Maryland;(2) National Institute of Standards and Technology, 20899 Gaithersburg, Maryland |
| |
| Abstract: | Discrete electron-molecule processes relevant to SF6 etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF6, SO2, SOF2, SO2F2, SOF4, and SF4, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF6 by-products in SF6. |
| |
| Keywords: | Attachment rates cross section dissociative attachment electron scattering SF6 SF4 SO2 SOF2 SOF4 SO2F2 |
| 本文献已被 SpringerLink 等数据库收录！ |
|
