| 半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制 |
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| 引用本文： | 赵有文,董志远,李成基,段满龙,孙文荣. 半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制[J]. 半导体学报, 2006, 27(3): 524-529 |
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| 作者姓名： | 赵有文 董志远 李成基 段满龙 孙文荣 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 综合深能级缺陷和电学性质的测试结果,证明了半绝缘InP单晶材料的电学性能、热稳定性、均匀性等性能与材料中一些深能级缺陷的含量密切相关.通过分析深能级缺陷产生的规律与热处理及生长条件的关系,给出了抑制缺陷产生,提高材料质量的途径.对缺陷的属性与形成机理进行了分析讨论.
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| 关 键 词： | 磷化铟 半绝缘 缺陷 |
| 文章编号： | 0253-4177(2006)03-0524-06 |
| 收稿时间： | 2005-08-11 |
| 修稿时间： | 2005-11-07 |
Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP |
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| Zhao Youwen,Dong Zhiyuan,Li Chengji,Duan Manlong and Sun Wenrong. Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP[J]. Chinese Journal of Semiconductors, 2006, 27(3): 524-529 |
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| Authors: | Zhao Youwen Dong Zhiyuan Li Chengji Duan Manlong Sun Wenrong |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100084,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100085,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100087,China |
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| Abstract: | By combining the measurement results of electrical properties and deep level defects,the electrical properties,thermal stability,and electrical uniformity of semi-insulating single crystal InP are demonstrated that they have a close correlation with the content of the deep level defects.An approach to improving the material quality is given through analysis of the dependence of the deep level defects on annealing and growth conditions.The formation mechanism and nature of the deep level defects are discussed. |
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| Keywords: | InP semi-insulating defect |
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