A2B6 electric-discharge semiconductor focon laser

The working principle of the electric-discharge semiconductor focon laser is considered. CdS, Cd _x Zn_1?x Se, and CdS _x Se_1?x plates were used as active medium. In the case of CdS, lasing at λ = 525 nm was observed. The radiation power reached 3 kW, the pulse duration being 3 ns. The conditions of generation initiation in the streamer regime are considered. The spectral characteristics of discharge channel radiation in Cd _x Zn_1?x Se and CdS _x Se_1?x plates are investigated. The spectrum is shown to consist of discrete lines occurring upon discharge propagation and corresponding to the change in the composition of the ternary compound obtained in the course of single crystal growth. The application of ternary solid solutions A2B6 is supposed to help in obtaining a successive laser pulse generation within the range of 480 to 700 nm.