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Slow structural transitions of hydrogen in hydrogenated amorphous silicon during low temperature annealing |
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| Authors: | A Asano |
| Institution: | Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, W-7000, Stuttgart 80, Germany |
| Abstract: | A slow decrease in the number of Si-H bonds in B-doped a-Si:H during annealing at 220°C has been observed. It is shown that during annealing hydrogen is transferred irreversibly from a bonded state into molecular H2 trapped in the samples. This has important implications for the determination of H-diffusion coefficient by SIMS or ERDA. |
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