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Theoretical model for thin ferroelectric films and the multilayer structures based on them
Authors:A S Starkov  O V Pakhomov  I A Starkov
Institution:19983. Institute of Refrigeration and Biotechnologies, St. Petersburg National Research Univeristy ITMO, St. Petersburg, 191002, Russia
29983. Institute for Microelectronics, Vienna University of Technology, Wien, A-1040, Austria
Abstract:A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.
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