Single-electron tunneling in silicon nanostructures |
| |
Authors: | A Tilke L Pescini RH Blick H Lorenz JP Kotthaus |
| |
Institution: | Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universit?t, Geschwister-Scholl-Platz 1, 80539 Munich, Germany (Fax.: +49-89/2180-3182, E-mail: armin.tilke@physik.uni-muenchen.de), DE
|
| |
Abstract: | We present a brief overview on different realizations of single-electron devices fabricated in silicon-on-insulator films.
Lateral structuring of highly doped silicon films allows us to observe quasi-metallic Coulomb blockade oscillations in shrunken
wires where no quantum dot structure is geometrically defined. Embedding quantum dot structures into the inversion channel
of a silicon-on-insulator field-effect transistor Coulomb blockade up to 300 K is observed. In contrast to the quasi-metallic
structures, in these devices the influence of the quantum mechanical level spacing inside the dot becomes visible. Suspending
highly doped silicon nanostructures leads to a novel kind of Coulomb blockade devices allowing both high-power application
as well as the study of electron–phonon interaction.
Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000 |
| |
Keywords: | PACS: 85 30 Vw 85 30 Yy 07 10 Cm |
本文献已被 SpringerLink 等数据库收录! |