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Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition |
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| Authors: | ST Tan XW Sun XH Zhang BJ Chen SJ Chua Anna Yong ZL Dong X Hu |
| Institution: | aSchool of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore bInstitute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore cSchool of Materials Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore |
| Abstract: | Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80 K showed that the emission of QDs embedded film ranged from 3.0 to 3.6 eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs. |
| Keywords: | A2 MOCVD A3 Quantum dots B1 Nanocrystals B1 ZnO |
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