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Structural characterization of shock-affected sapphire |
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| Authors: | M. Mazilu S. Juodkazis T. Ebisui S. Matsuo H. Misawa |
| Affiliation: | (1) SUPA, School of Physics and Astronomy, University of St. Andrews, North Haugh, St. Andrews, KY16 9SS, UK;(2) CREST-JST & Research Institute for Electronic Science, Hokkaido University, N21W10 CRIS Bldg., Sapporo 001-0021, Japan;(3) Ecosystem Engineering Department, The University of Tokushima, Tokushima 770-8506, Japan |
| Abstract: | The presence of dislocations has been revealed by numerical processing of high–resolution transmission electron microscopy images from the regions affected by a shock wave propagation. The shock wave was triggered by a single 220 fs duration pulse of 30 nJ at an 800 nm wavelength inside sapphire at approximately 10 μm depth. The shock-amorphised sapphire has a distinct boundary with the crystalline phase, which is not wet etchable even at a dislocation density of ≃8×1012 cm-2. PACS 81.07.-b; 96.50.Fm; 62.50.+p; 47.40.Nm; 81.40.-z |
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