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The fundamental surface science of wurtzite gallium nitride
Authors:VM Bermudez
Institution:Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA
Abstract:A review is presented that covers the experimental and theoretical literature relating to the preparation, electronic structure and chemical and physical properties of the surfaces of the wurtzite form of GaN. The discussion includes the adsorption of various chemical elements and of inorganic, organometallic and organic species. The focus is on work that contributes to a microscopic, atomistic understanding of GaN surfaces and interfaces, and the review concludes with an assessment of possible future directions.
Keywords:2D  Two-Dimensional  2DEG  Two-Dimensional Electron Gas  2DPS  Two-Dimensionally-Periodic Slab  3D  Three-Dimensional  AES  Auger Electron Spectroscopy  AFM  Atomic Force Microscopy  ARUPS  Angle-Resolved Ultraviolet Photoemission Spectroscopy  B3LYP  Becke-3 Lee-Yang-Parr  BB  Band Bending  BE  Binding Energy  BEP  Beam-Equivalent Pressure  BZ  Brillouin Zone  CBED  Convergent-Beam Electron Diffraction  CBM  Conduction Band Minimum  CMP  Chemo-Mechanical Polishing  C-V  Capacitance-Voltage  CVD  Chemical Vapor Deposition  DB  Dangling Bond  DFT  Density Functional Theory  DFTB  Density Functional Tight Binding  DI  DOS  Density of States  ECR  Electron Counting Rule  EDAX  Energy-Dispersive Analysis by X-rays  ELS  (Electron) Energy Loss Spectroscopy  ESD  Electron-Stimulated Desorption  FCC  Face-Centered Cubic  FK  Fuchs-Kliewer  FLAPW  Full-Potential Linearized Augmented Plane Wave  GGA  Generalized Gradient Approximation  HCP  Hexagonal Close-Packed  HOMO  Highest Occupied Molecular Orbital  HREELS  High-Resolution Electron Energy Loss Spectroscopy  HRTEM  High-Resolution Transmission Electron Microscopy  HSE  Heyd-Scuseria-Ernzerhoff  IBA  Ion Bombardment and Annealing  IPES  Inverse Photoemission Spectroscopy  ISS  Ion-Scattering Spectroscopy  I-V  Current-Voltage  KE  Kinetic Energy  LDA  Local Density Approximation  LEED  Low-Energy Electron Diffraction  LEEM  Low-Energy Electron Microscopy  MBE  Molecular Beam Epitaxy  MD  Molecular Dynamics  MIGS  Metal-Induced Gap States  ML  Monolayer  MOCVD  Metal-Organic Chemical Vapor Deposition  MOVPE  Metal-Organic Vapor-Phase Epitaxy  NBLP  Non-Bonding Lone Pair (Orbital)  NCPP  Norm-Conserving Pseudopotential  NEA  Negative Electron Affinity  NEB  Nudged Elastic Band  NLCC  Non-Linear Core Correction  PAW  Projector Augmented Wave  PBE  Perdew-Burke-Ernzerhoff  PED  Photoelectron Diffraction  PH  Pseudo-Hydrogen  PL  Photoluminescence (Spectroscopy)  PP  Pseudopotential  PW  Plane Wave  PW-91  Perdew-Wang 1991  QCO  Quartz Crystal Oscillator  RAS  Reflection-Absorption Spectroscopy  RBS  Rutherford Backscattering  RHEED  Reflection High-Energy Electron Diffraction  RHF  Restricted Hartree Fock  RMS  Root Mean Square  RPES  Resonant Photoemission Spectroscopy  RT  Room Temperature  SAM  Self-Assembled Monolayer  SBH  Schottky Barrier Height  SCL  Space-Charge Layer  SCLS  Surface Core-Level Shift  SE  Spectroscopic Ellipsometry  SIMS  Secondary-Ion Mass Spectroscopy  SPV  Surface Photovoltage (or Surface Photovoltaic)  STM  Scanning Tunneling Microscopy  STS  Scanning Tunneling Spectroscopy  SUC  Surface Unit Cell  TEG  Triethylgallium  TEM  Transmission Electron Microscopy  TCE  Trichloroethylene  TMG  Trimethylgallium  TOF-SARS  Time-of-Flight Scattering and Recoil Spectroscopy  TPD  Temperature-Programmed Desorption  UHV  Ultra-High Vacuum  UPS  Ultraviolet Photoemission Spectroscopy  USPP  Ultra-Soft Pseudopotential  UV  Ultraviolet  VBM  Valence Band Maximum  VPE  Vapor-Phase Epitaxy  XAES  X-ray-(Excited) Auger Electron Spectroscopy  XPS  X-ray Photoemission Spectroscopy  XRD  X-ray Diffraction  
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