Inelastic resonant tunneling

A general expression for the resonant contribution to a tunneling current has been obtained and analyzed in the tunneling Hamiltonian approximation. Two types of resonant tunneling structures are considered: structures with a random impurity distribution and double-barrier structures, where the resonant level results from size quantization. The effect of temperature on the current-voltage curves of tunneling structures is discussed. The study of the effect of potential barrier profile on the d ² I/dV ² line shape is of interest for experiments in inelastic tunneling spectroscopy. Various experimental situations where the inelastic component of the tunneling current can become comparable to the elastic one are discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 1151–1155 (June 1998)