首页 | 本学科首页   官方微博 | 高级检索  
     

TDI图像传感器横向抗晕栅极电压与满阱容量关系研究
引用本文:曲杨,王欣洋,周泉,常玉春. TDI图像传感器横向抗晕栅极电压与满阱容量关系研究[J]. 半导体光电, 2020, 41(2): 169-172
作者姓名:曲杨  王欣洋  周泉  常玉春
作者单位:中国科学院长春光学精密机械与物理研究所, 长春 130033;中国科学院大学, 北京 100049;长光辰芯光电技术有限公司, 长春 130033;大连理工大学 微电子学院, 大连 116600
基金项目:国家自然科学基金项目(11975066).
摘    要:时间延时积分CMOS图像传感器(TDI-CIS)具有优良的微光探测能力,可应用于航空探测及卫星遥感等领域。然而,在入射光强较强时,TDI-CIS容易出现光晕(Blooming)现象,影响观测效果。首先分析了光晕产生的机理;然后基于两种传统的抗晕结构,设计出一种具有沿垂直方向布局的长方形横向抗晕栅的TDI-CIS;通过成像实验发现横向抗晕栅极电压与抗晕效果及满阱容量(FWC)之间呈负相关关系;最后通过实验得到所设计TDI-CIS的最优抗晕栅极电压值为2.1V。

关 键 词:时间延时积分  CMOS  光晕  横向抗晕栅  满阱容量
收稿时间:2019-12-23

Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor
QU Yang,WANG Xinyang,ZHOU Quan,CHANG Yuchun. Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor[J]. Semiconductor Optoelectronics, 2020, 41(2): 169-172
Authors:QU Yang  WANG Xinyang  ZHOU Quan  CHANG Yuchun
Affiliation:Changchun Institute of Optics, Fine Mechanics and Physics of the Chinese Academy of Sciences, Changchun 130033, CHN;University of Chinese Academy of Sciences, Beijing 100049, CHN;Gpixel.Incorporation, Changchun 130033, CHN; School of Microelectronics, Dalian University of Technology, Dalian 116600, CHN
Abstract:Due to its excellent detection ability under low light illumination,time delay integration CMOS image sensor(TDI-CIS)can be applied in aviation detection and satellite remote sensing.However,it is easy to appear blooming phenomenon to affect observation when TDI-CIS is under higher intensity illumination.In this paper,the mechanism of blooming is introduced firstly and a TDI-CIS with rectangle lateral anti-blooming gate which is arranged in vertical direction based on two different anti-blooming structures is designed.Imaging tests indicate that the voltage of anti-blooming gate(VABG)is negatively corrected with anti-blooming and full well capacity(FWC).Finally,the optimal VABGof 2.1 Vis obtained.
Keywords:TDI  CMOS  blooming  lateral anti-blooming gate  FWC
本文献已被 维普 等数据库收录!
点击此处可从《半导体光电》浏览原始摘要信息
点击此处可从《半导体光电》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号