Millisecond fluorescence in InAs quantum dots embedded in AlAs |
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| Authors: | T S Shamirzaev A M Gilinsky A I Toropov A K Bakarov D A Tenne K S Zhuravlev C von Borczyskowski D R T Zahn |
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| Institution: | a Institute of Semiconductor Physics, pr. Lavrenteva 13, Novosibirsk 630090, Russia;b Institut für Physik, Technische Universität Chemnitz, Chemnitz D-09107, Germany |
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| Abstract: | The temperature dependence of steady-state and time-resolved photoluminescence from self-assembled InAs quantum dots embedded in AlAs has been studied. Millisecond-long nonexponential photoluminescence decay is observed in the temperature range of 4.2–50 K. At higher temperatures, the decay time decreases to a few nanoseconds. The experimental results are interpreted using a model of singlet–triplet splitting of exciton levels in small dots in a dense quantum dot system with local carrier transfer between dots. |
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| Keywords: | Self-assembled quantum dots Photoluminescence Excitons Singlet– triplet splitting |
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