Ion and radical reactions in the silane glow discharge deposition of a-Si:H films |
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Authors: | G. Turban Y. Catherine B. Grolleau |
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Affiliation: | (1) Laboratoire de Physique Corpusculaire, E.R.A. C.N.R.S. 924, Université de Nantes, 2, rue de la Houssinière, 44072 Nantes Cedex, France |
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Abstract: | A mass spectrometric analysis of the positive ions and neutral products in a silane glow discharge has been performed. The active species, created by dissociation, disproportionation, and ion-molecule reactions are mainly SiH2, SiH3, and H. A calculation of the distribution of the SiHn+ ions shows that the silane concentration monitors the abundance of SiH3+. The diffusional transport of radicals toward the discharge-tube walls can explain the observed deposition rates. The study of SiH4-SiD4 and SiH4-D2 plasmas emphasizes several reactions which modify the free-radical populations depending on the discharge conditions: disproportionation, termination, recombination, and abstraction. Heterogeneous reactions have also been observed: etching of the film by H atoms and direct incorporation of hydrogen in the growing film. A general scheme for the plasma deposition mechanism is proposed. |
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Keywords: | Silane plasma amorphous silicon plasma deposition mechanism |
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