Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy |
| |
| Authors: | M. Porrini M.G. Pretto R. Scala A.V. Batunina H.C. Alt R. Wolf |
| |
| Affiliation: | (1) MEMC Electronic Materials, via Nazionale 59, 39012 Merano, Italy;(2) Institute of Rare Metals, B. Tolmachevskiy per. 5, 1091017 Moscow, Russia;(3) Fachhochschule München, 80335 München, Germany;(4) Polysilcon & Silica, Wacker-Chemie GmbH, 84489 Burghausen, Germany |
| |
| Abstract: | The calibration factors for the determination of boron and phosphorus concentration in single crystal silicon by low temperature Fourier transform infrared spectroscopy are examined, with the aim of comparing the behaviour of float-zone and Czochralski samples. It is shown that common calibration factors, derived from a correlation with four-point probe resistivity measurement, can be applied to both material types. Moreover, no significant difference in carrier mobility is observed between FZ and CZ, as determined by Hall effect measurements, in a wide oxygen range: 2–9×1017 cm-3, confirming that the same conversion algorithm to deduce the carrier concentration from the resistivity measurement can be applied. PACS 72.80; 78.30; 81.05 |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
