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Influence of Electron-Phonon Interactions on the Physical Properties of an Interface Polaron
Authors:Ze HU  You-Tang WANG  Shi-Wei GU  TC AU-YEUNG  YY YEUNG
Institution:1. Applied Physics Department and Institute of Condensed Matter Physics Shanghai Jiao Tong University, Shanghai 200030, China; 2. International Center for Material Physics, Academia Sinica, Shenyang 110015 and Applied Physics Department and Institute of Condensed Matter Physics Shanghai Jiao Tong University, Shanghai 200030, China; 3. Applied Mathematics Department, Hong Kong Polytechnic, Hunghom, Hong Kong; 4. Applied Physics Department, Hong Kong Polytechnic, Hunghom, Hong Kong
Abstract:Taking into account the interactions of both bulk longitudinal optical (LO) pltonons and surface optical (SO) pltonons and using Haga's perturbatioit method, we derive an effective Hamiltonian for the interface magnetopolaron in polar crystals at zero temperature. We illustrate in details how to solve this effective Hamiltonian analytically and we obtain explicit formulae not on1y for the electron cyclotron mass associated with the Landau levels but also for the self-trapping energy of the magnetopolaron with respect to its first three quantum states in the direction normal to the interface of the system. Numerical results are calculated for some Ⅱ-Ⅵ and Ⅲ-Ⅴ semiconductor compounds,indicting that the bulk LO phonons and SO phonons do have different trends of effects on the electron in different quantum states.
Keywords:
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