薄膜CdSe及CdSexTe1-x电极的光电子能谱研究

用X射线光电子能谱(XPS)研究了不同含氧气氛中烧结的薄膜CdSe及Cdse_xTe_1-x电极表面,以及薄膜与Ti底基之间的界面。研究中发现,二种薄膜电极的表面形成了CdO,SeO₂及TeO₂氧化物,与薄膜接触的Ti底基表面上形成了TiO₂。用俄歇电子能谱(AES)对在电极表面及Ti表面所生成的氧化层分别进行了深度分析。结果表明,各种氧化物形成的程度有很大的不同,氧化层厚度也存在差异。对影响薄膜电极的光电性能的因素进行了讨论。

XPS STUDIES OF CdSe AND CdSexTe1-x THIN FILM ELECTRODES

The surfaces of CdSe,CdeS_x,Te_1-x thin film electrodes and the interfaces between thin films and Ti substrates were investigated after annealing in N₂ atmosphere containing different content of O₂ by X-ray Electron Spectroscopy.It was found that the oxides such as CdO,SeO₂,TeO₂ were formed on the surfaces of both thin films and TiO₂ was formed on Ti substrate surfaces which contact with thin films.Auger Electron Spectroscopy were used for depth analysis.The results showed that there were differences in degree and in thickness for oxides formation.The influencing factors on photoelectr ochemical behaviour of the thin film electrodes were discussed.