RVB-Itinerant P Hole Model for High-Tc Copper Oxides |
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| Authors: | WU Hang-sheng SU Zhao-bin |
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| Institution: | 1. Department of Physics, University of Science and Technology of China;
2. Institute of Theoretical Physics, Academia Sinica P. ;
0. Box 2735, Beijing 100080, China |
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| Abstract: | A model for the high-Tc Copper Oxides is studied. The, localized nature of Cu 3d electrons is described as the RVB quantum spin liquid and the doped O 2p holes are described with an itinerant band. Our analysis shows that the virtual exchange of two spinons induces a pairing interaction between two holes. |
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