| n-CdSe/Fe(CN)64-/3-光阳极上的光氧化竞争反应及用L-B技术修饰电极的影响 |
| |
| 引用本文： | 刘顺林,钱道荪,孙璧媃.n-CdSe/Fe(CN)64-/3-光阳极上的光氧化竞争反应及用L-B技术修饰电极的影响[J].影像科学与光化学,1990,8(4):284-290. |
| |
| 作者姓名： | 刘顺林 钱道荪 孙璧媃 |
| |
| 作者单位： | 上海交通大学应用化学系 上海 200030 |
| |
| 摘 要： | 用旋转环盘电极研究了还原剂K4Fe(CN)6与n-CdSe光阳极上的竞争空穴的氧化反应,证明还原剂捕获光生空穴的途径为直接自价带俘获空穴。又利用L-B技术在n-CdSe电极表面修饰硬脂酸二茂铁酯,结果表明还原剂俘获光生空穴的能力增强,电极的稳定系数提高。
|
| 关 键 词： | n-CdSe电极 光电化学 L-B技术 修饰电极 |
| 收稿时间： | 1989-02-27 |
THE COMPETITIVE PHOTO-OXIDATION AT n-CdSc/Fe(CN)64-/3- PHOTOANODE AND THE INFLUENCES OF MODIFICATION BY L-B TECHNIQUE |
| |
| LIU SHUN-LIN,QIAN DAO-SUN,SUN BI-ROU.THE COMPETITIVE PHOTO-OXIDATION AT n-CdSc/Fe(CN)64-/3- PHOTOANODE AND THE INFLUENCES OF MODIFICATION BY L-B TECHNIQUE[J].Imaging Science and Photochemistry,1990,8(4):284-290. |
| |
| Authors: | LIU SHUN-LIN QIAN DAO-SUN SUN BI-ROU |
| |
| Institution: | Department of Applied Chemistry, Shanghai Jiao Tong University, Shanghai 200030, P. R. China |
| |
| Abstract: | The competitive oxidation reaction of hole between the reducing agent K4Fe(CN)6 and n-CdSe photoanode was studied by RRDE.The results proved that the photogenerated holes are captured directly from the valence band.After modification of ferrocenylene-octadecanoate L-B films,the competitive oxidation effect of reducing agent is enhanced and the stabilization efficiency of the electrode was increased for about 20%. |
| |
| Keywords: | n-CdSe electrode photoelectrochemistry L-B technique modified electrode |
|
| 点击此处可从《影像科学与光化学》浏览原始摘要信息 |
| 点击此处可从《影像科学与光化学》下载免费的PDF全文 |
