Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity |
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引用本文: | 李志华,郭丽伟,吴曙东,王文新,黄绮,周均铭.Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity[J].中国物理快报,2005,22(7):1729-1731. |
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作者姓名: | 李志华 郭丽伟 吴曙东 王文新 黄绮 周均铭 |
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作者单位: | InstituteofPhysics,ChineseAcademyofSciences,Beijing100080 |
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摘 要: | Two kinds of superlattice interfaces of InAs/AlSb superlattices are realized in an optimized interface growth process, where one is AlAs-like and the other is InSb-like grown on a relaxed AlSb buffer layer. The superlattice properties such as interface roughness and layer thickness are studied by grazing incidence x-ray reflectivity. The reflectivity curves are simulated by standard software till the simulation curves match well with the experimental curves. The simulation indicates that AlAs-like interfaces are much rougher than InSb-like interfaces. Grazing incidence x-ray reflectivity is also discussed as a powerful tool to assessing the structure properties of superlattices.
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关 键 词: | 界面性质 砷化铟 锑化铝 超晶格特征 切线入射X-射线反射率 半导体 |
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