Engineering of tunnel barrier for highly integrated nonvolatile memory applications |
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Authors: | Hee-Wook You Jung-Woo Son Won-Ju Cho |
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Institution: | (1) Electronic Science Department, Kurukshetra University, Kurukshetra, 136119, Haryana, India |
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Abstract: | In this paper, the engineered tunnel barrier technology is introduced by using the engineered tunnel barrier of VARIOT type
(SiO2/Si3N4/SiO2) and CRESTED type (Si3N4/SiO2/Si3N4) with Si3N4 and high-k HfO2 layers as charge trapping layers, respectively. In addition, the high-k stacked VARIOT type of SiO2/HfO2/Al2O3 and Al2O3/HfO2/Al2O3 are compared with O/N/O tunnel barrier memory. As a result, the engineered tunnel barrier memory device showed excellent
memory characteristics compared to the single SiO2 tunnel barrier memory device, such as very high P/E (program/erase) speed, good retention time and no degradation in endurance
characteristics. |
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Keywords: | |
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