首页 | 本学科首页   官方微博 | 高级检索  
     检索      


InGaN micro-pixellated light-emitting diodes with nano-textured surfaces and modified emission profiles
Authors:Z Gong  Y F Zhang  P Kelm  I M Watson  E Gu and M D Dawson
Institution:(1) Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore, 117602, Singapore;(2) Singapore-MIT Alliance, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
Abstract:We present the fabrication details and performance characteristics of InGaN light-emitting diodes (LEDs) consisting of arrays of interconnected micro-pixels where each micro-pixel is nano-textured via nano-imprinting. We have taken the further step of embodying the pixels in a rhomboidal geometry. It is found that the power output of these nano-textured micro-LEDs with rhomboidal geometries is 57% higher than that of conventional square-shaped broad-area reference LEDs. The series resistance of the textured LEDs is reduced, owing to the multi-finger electrodes introduced. Furthermore, these LEDs can sustain higher operation current of up to 500 mA without encapsulation, suggesting improved thermal dissipation capability. Finally, the combined effects of surface texturing, micro-LED configuration, and geometric shaping on the light extraction are analyzed. It is found that the power enhancement by surface texturing, micro-pixellating and the rhomboidal geometry are 32%, 16%, and 9%, respectively, implying that surface texturing is the most effective contribution to increasing the light extraction efficiency in our design. The angular dependent far-field beam profile is also remarkably changed, compared with the standard Lambertian emission pattern of the conventional square-shaped LEDs. Substantial increase in the EL intensity is evident from both the top surface and the sidewall.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号