Nanoscale modification of Ni/Al interfaces by low-energy $\mathrm{O}_{2}^{+}$ reactive ion beam mixing |
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Authors: | A Arranz C Palacio |
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Institution: | (1) Department of Physics, University of Bath, Bath, BA2 7AY, UK;(2) Department of Physics, King’s College London, London, WC2R 2LS, UK;(3) Department of Electronic Materials Engineering, The Australian National University, Canberra, ACT, 0200, Australia |
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Abstract: | The kinetics of growth, composition and electronic structure of thin oxide films formed by reactive ion beam mixing (IBM)
of Ni/Al interfaces bombarded with low-energy (3-keV) O2+\mathrm{O}_{2}^{+} ions have been studied at room temperature using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy
and factor analysis. Initially, NiO species are formed but, later, with increasing ion dose, Ni–Al mixed oxide species appear
due to Al incorporation in the near-surface region. These changes are accompanied by a slight increase of the oxygen concentration
and a decrease of the Ni/Al ratio in the thin oxide films formed. Angle-resolved X-ray photoelectron spectroscopy shows that
Ni–Al mixed oxide species are located nearer the surface than NiO species. Experimental results have been compared with Monte
Carlo TRIDYN simulations, suggesting that processes driven by residual defects or the reaction with oxygen predominate over
pure ballistic mechanisms during reactive IBM of Ni/Al interfaces. |
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