Memristive operations demonstrated by gap-type atomic switches |
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| Authors: | Tsuyoshi Hasegawa Alpana Nayak Takeo Ohno Kazuya Terabe Tohru Tsuruoka James K Gimzewski Masakazu Aono |
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| Institution: | 1.WPI Center for Materials Nanoarchitectonics (MANA),National Institute for Materials Science (NIMS),Tsukuba,Japan;2.Japan Science and Technology Agency, CREST,Chiyoda-ku, Tokyo,Japan;3.Department of Chemistry and Biochemistry,University of California, Los Angeles,Los Angeles,USA |
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| Abstract: | We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions.
In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories
(ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing
their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning
process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience. |
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