| 外加电场对铁电薄膜相变的影响 |
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| 引用本文： | 吕业刚,梁晓琳,龚跃球,郑学军,刘志壮. 外加电场对铁电薄膜相变的影响[J]. 物理学报, 2010, 59(11): 8167-8171 |
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| 作者姓名： | 吕业刚 梁晓琳 龚跃球 郑学军 刘志壮 |
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| 作者单位： | (1)湖南科技学院电子工程系,永州 425100; (2)湖南科技学院电子工程系,永州 425100;湘潭大学材料与光电物理学院,湘潭 411105; (3)湘潭大学材料与光电物理学院,湘潭 411105 |
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| 基金项目： | 国家杰出青年科学基金(批准号:10825209)资助的课题. |
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| 摘 要： | 采用热力学非线性理论,研究了外加电场对立方基底Pb(Zr0.3Ti0.7)O3(PZT)铁电薄膜相变的影响.通过数值计算,得到了"失配应变-外加电场"相图,及外加电场与极化强度的关系.当外加电场达到186 kV/cm时,能使生长在SrTiO3 基底上PZT铁电薄膜从单斜r相转变为c相.在实验上,采用扫描探针显微镜通过对PZT薄膜施加不同的极化电场来研究了它的电畴翻转.从得到的压电响应相图可以看出,绝大多数的电畴是清晰可关键词：铁电薄膜相变扫描探针显微镜失配应变
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| 关 键 词： | 铁电薄膜 相变 扫描探针显微镜 失配应变 |
| 收稿时间： | 2010-02-06 |
| 修稿时间： | 2010-03-07 |
Effect of external electric field on phase transitions of ferroelectric thin films |
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| Lu Ye-Gang,Liang Xiao-Lin,Gong Yue-Qiu,Zheng Xue-Jun,Liu Zhi-Zhuang. Effect of external electric field on phase transitions of ferroelectric thin films[J]. Acta Physica Sinica, 2010, 59(11): 8167-8171 |
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| Authors: | Lu Ye-Gang Liang Xiao-Lin Gong Yue-Qiu Zheng Xue-Jun Liu Zhi-Zhuang |
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| Affiliation: | Hunan University of Science and Engineering,Yongzhou 425100,China;Faculty of Material and Photoelectronic Physics,Xiangtan University,Xiangtan 411105,China;Hunan University of Science and Engineering,Yongzhou 425100,China;Faculty of Material and Photoelectronic Physics,Xiangtan University,Xiangtan 411105,China;Faculty of Material and Photoelectronic Physics,Xiangtan University,Xiangtan 411105,China;Hunan University of Science and Engineering,Yongzhou 425100,China |
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| Abstract: | A nonlinear thermodynamic theory is used to investigate the effect of external electric field on the phase transitions of Pb(Zr0.3Ti0.7)O3(PZT) thin films epitaxially grown on dissimilar cubic substrates. The "misfit strain-external electric filed" phase diagram and the relationship between electirc filed and polarization are constructed for PZT thin films. The external electric field can transform the monoclinic r phase into the c phase,when its value reaches 186 kV/cm for PZT thin film grown on the SrTiO3 substrate. On the other hand,the domain switching of PZT thin film is investigated experimentally by scanning probe microscopy(SPM) via varying the applied polarizing electric field. The piezo-phase images reveal that most ferroelectric domains are clearly detectable. In the r phase,the domains can be reversed into the direction of polarization of the c phase,when the applied electric field increases to 200 kV/cm,which is close to the theoretical value (186 kV/cm). |
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| Keywords: | ferroelectric thin film phase transition scanning probe microscopy misfit strain |
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