| 掺镁铌酸锂亚微米结构畴反转的研究 |
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| 引用本文： | 闫卫国,陈云琳,王栋栋,郭娟,张光寅. 掺镁铌酸锂亚微米结构畴反转的研究[J]. 物理学报, 2006, 55(11): 5855-5858 |
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| 作者姓名： | 闫卫国 陈云琳 王栋栋 郭娟 张光寅 |
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| 作者单位： | (1)教育部弱光非线性光子学材料先进技术及制备实验室，南开大学物理学院，天津 300071; (2)教育部弱光非线性光子学材料先进技术及制备实验室，南开大学物理学院，天津 300071；晶体材料国家重点实验室，山东大学，济南 250100 |
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| 基金项目： | 国家自然科学基金;天津市自然科学基金;教育部长江学者奖励计划 |
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| 摘 要： | 研究了掺镁铌酸锂(MgO：LiNbO3)的极化特性及其畴壁运动的性质,通过调节多个脉冲外加电场来控制畴壁的运动,在背向反转效应作用下,反转畴发生劈裂,制备出均匀的掺镁铌酸锂亚微米周期畴结构,并分析探讨了掺镁铌酸锂亚微米结构的成因及其反转机理.关键词：亚微米畴结构掺镁铌酸锂背向反转
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| 关 键 词： | 亚微米畴结构 掺镁铌酸锂 背向反转 |
| 文章编号： | 1000-3290/2006/55(11)/5855-04 |
| 收稿时间： | 2006-02-28 |
| 修稿时间： | 2006-02-282006-03-30 |
Research on the submicron domain inversion structure of MgO:LiNbO3 |
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| Yan Wei-Guo,Chen Yun-Lin,Wang Dong-Dong,Guo Juan,Zhang Guang-Yin. Research on the submicron domain inversion structure of MgO:LiNbO3[J]. Acta Physica Sinica, 2006, 55(11): 5855-5858 |
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| Authors: | Yan Wei-Guo Chen Yun-Lin Wang Dong-Dong Guo Juan Zhang Guang-Yin |
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| Affiliation: | 1. The Key Laboratory of Advanced Technique and Fabrication For Weak.Light Nonlinear Photonics Materials,Ministry of Education, College of Physics , Nankai University, Tianjin 300071, China;2. The State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | We have investigated the periodic poling characteristics of MgO: LiNbO3 and properties of the domain wall velocity. Based on back-switching reaction, domain-inverted velocity can be accurately controled by multi-impulse electric field, which can be used to fabricate MgO: LiNbO3 with submicron uniform periodical structure. At the same time, we studied the cause of formation and the mechanism of submicron domain-inverted structure. |
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| Keywords: | submicron domain-structure MgO: LiNbO3 back-switching |
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