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Passivation of dislocations in silicon by hydrogenation |
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| Authors: | I Perichaud HEl Ghitani S Martinuzzi |
| Institution: | a Laboratoire de Photoélectricité des Semi-conducteurs Polycristallins, Faculté des Sciences et Techniques de Marseille de St. Jérôme, F-13397, Marseille Cedex, France |
| Abstract: | Multicrystalline silicon wafers containing dislocations have been investigated before and after hydrogenation, after external gettering by phosphorus diffusion and also after the two treatments. It was found that the two treatments are complementary, and improve drastically the wafers. As gettering by phosphorus is able to remove fast diffusers it is concluded that interaction of hydrogen with segregated oxygen atoms could explain the passivation of dislocations. |
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