Bound exciton luminescence of Ar- and Al-implanted ZnO |
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Authors: | M Schilling R Helbig G Pensl |
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Institution: | Institut für Angewandte Physik, Universität Erlangen — Nürnberg, Glückstr. 9, D-8520 Erlangen, FRG |
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Abstract: | Argon- and aluminum-implanted ZnO single crystals (Nimpl=1016?1019cm?3) were investigated at liquid helium temperature by photoluminescence. We obtained highly resolved emission spectra of implanted and thermally annealed samples. Maximum luminescence yield was achieved after annealing with an oxygen ambient at 800°C and an anneal time of 30 min. In Al-implanted ZnO crystals, we observed a strong emission line . The intensity of this line is correlated with the implanted Al concentration. The I line is interpreted as the recombination of a bound exciton at a polycentric Al complex. |
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