Fluorescence properties of Bi4Ge3O12(BGO) single crystals under laser excitation: Excited state dynamics and saturation effects |
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Authors: | F. Rogemond C. Pedrini B. Moine G. Boulon |
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Affiliation: | U.A. 442 CNRS, Physico-Chimie des Matériaux Luminescents, Université Claude Bernard, 43, Boulevard du 11 Novembre 1918, 69622 - Villeurbanne, France |
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Abstract: | Laser-excited techniques were used to investigate the optical properties of bismuth germanate crystals. Absorption, reflectivity, excitation, emission, lifetime, time-resolved fluorescence, photoconductivity, thermally stimulated conductivity measurements were performed at various temperatures on single crystals of different origins.The absorption is shown to occur in bismuth and germanate centers while both intrinsic and perturbed Bi3+ ions together with impurities contribute to the total fluorescence.The emission mechanism at room temperature involves a thermally activated energy migration, and at low temperature localized emitting centers. Formation of deep holes in the wide emission band at room temperature reveals saturation effects on various luminescent centers, promoted by energy migration. Trapped exciton models are proposed to explain the excited state dynamics occurring at low and room temperature. |
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