Localized optical phonons in GaAs/AlAs superlattices grown on (311)A and (311)B surfaces |
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| Authors: | A Milekhin Yu Pusep Yu Yanovskii V Preobrazhenskii B Semyagin |
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| Institution: | (1) Institute for Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia |
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| Abstract: | A study is reported of optical vibrational modes in 311]-grown GaAs/AlAs superlattices. An analysis of the TO and LO localized modes observed in IR reflectance spectra showed that the difference between the TO and LO mode frequencies in superlattices grown on (311)A and (311)B surfaces is due to the different localization lengths of these modes. The dispersion of transverse optical phonons in GaAs
derived from IR reflectance spectra is in a good agreement with Raman scattering data.
Fiz. Tverd. Tela (St. Petersburg) 40, 550–552 (March 1998) |
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