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Charge transfer in CdTe at 200 and 300 K |
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| Authors: | K Balamurugan R Saravanan K Asharamani P Manimaran S Mariyappan N Srinivasan Y Ono M Isshiki T Kajitani |
| Institution: | a Thiagarajar College, Madurai 625009, Tamil Nadu, India b Madura College, Madurai 625011, Tamil Nadu, India c Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan d Institute for Advanced Materials Processing, Tohoku University, Sendai 980-8577, Japan |
| Abstract: | Using a perfect single crystal sample of CdTe grown using PVT method, the electronic charge transfer in the II–VI compound semiconductor CdTe at 200 and 300 K has been evaluated using two different approaches: (1) by solving a quadratic equation involving the observed structure factors of h+k+l=4n+2 type reflections; and (2) by a graphical approach in which the observed and calculated atomic form factors are extrapolated to sinθ/λ=0, to determine the transferred charge. Precise X-ray structure factors collected using MoK radiation have been used for the analysis. The results obtained are reasonable and clearly indicate the ionicity by which charge is transferred from Cd to Te in CdTe. |
| Keywords: | A1 Charge transfer A1 X-ray diffraction B1 CdTe B2 Semiconducting II–VI materials |
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