Crystal, electronic structures and photoluminescence properties of rare-earth doped LiSi2N3

The crystal and electronic structures, and luminescence properties of Eu²⁺, Ce³⁺ and Tb³⁺ activated LiSi₂N₃ are reported. LiSi₂N₃ is an insulator with an indirect band gap of about 5.0 eV (experimental value ∼6.4 eV) and the Li 2s, 2p states are positioned on the top of the valence band close to the Fermi level and the bottom of the conduction band. The solubility of Eu²⁺ is significantly higher than Ce³⁺ and Tb³⁺ in LiSi₂N₃ which may be strongly related to the valence difference between Li⁺ and rare-earth ions. LiSi₂N₃:Eu²⁺ shows yellow emission at about 580 nm due to the 4f⁶5d¹→4f⁷ transition of Eu²⁺. Double substitution is found to be the effective ways to improve the luminescence efficiency of LiSi₂N₃:Eu²⁺, especially for the partial replacement of (LiSi)⁵⁺ with (CaAl)⁵⁺, which gives red emission at 620 nm, showing highly promising applications in white LEDs. LiSi₂N₃:Ce³⁺ emits blue light at about 450 nm arising from the 5d¹→4f¹5d⁰ transition of Ce³⁺ upon excitation at 320 nm. LiSi₂N₃:Tb³⁺ gives strong green line emission with a maximum peak at about 542 nm attributed to the ⁵D₄→⁷F_J (J=3-6) transition of Tb³⁺, which is caused by highly efficient energy transfer from the LiSi₂N₃ host to the Tb³⁺ ions.