Effect of uniaxial strain on the structure of self-localized excitons in alkali halide crystals |
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Authors: | K Sh Shunkeev E T Sarmukhanov A A Barmina L N Myasnikova S K Shunkeev |
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Institution: | (1) Aktobe State Pedagogical Institute, 34 prosp. A. Moldagulovoi, Aktobe, 030000, Kazakhstan;(2) Al-Farabi Kazakh National University, Almaty |
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Abstract: | We have used luminescence spectroscopy to establish the effect of low-temperature (100 K) elastic uniaxial strain on the configuration
of a self-localized exciton (SLE) in alkali halide crystals (AHCs) at the instant of radiative relaxation. In face-centered
(fc) alkali halide crystals, redistribution of the luminescence intensity occurs from the asymmetric SLE configuration to
the symmetric SLE configuration (type III → II → I), while conversely in body-centered (bc) alkali halide crystals the redistribution
occurs in favor of the asymmetric (polarized) SLE configuration (type I → II). External strain along the 〈100〉 direction leads
to effective slip of the anions in the alkali halide crystals along the 〈110〉 direction, coinciding with the direction of
compression of the SLE, which promotes creation of preferentially the symmetric SLE configuration, while strain along the
〈110〉 direction, acting perpendicularly to the length of the SLE, leads to elongation of the SLE, which promotes creation
of the asymmetric SLE configuration with a higher degree of polarization.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 67–72, January–February, 2007. |
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Keywords: | alkali halide crystal self-localized exciton low-temperature elastic uniaxial strain radiative relaxation of a self-localized exciton with symmetric and asymmetric configurations |
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