Free carrier scattering mechanism in Bi2Se3 crystals

The single valley model proposed byKöhler andLandwehr is used for the calculation of transport parameters corresponding to pure Bi₂Se₃ crystals. From the measurements of transmission, reflectivity and the Hall constant the effective masses are determined,m _c =0·13m ₀ andm _c=0·56m ₀; using a simplification described in the paper the Fermi level is calculated to lie 0·14 eV above the bottom of the conduction band. This result allows us to conclude that a mixed mechanism of free carrier scattering exists inn-Bi₂Se₃ crystals, viz., the scattering by acoustic phonons prevails contributing about 75% and the scattering on ionized impurities contributes the remaining 25%. This result applies to pure Bi₂Se₃ crystals with free electron concentration 2×10¹⁹cm^–3.