High-resolution capability of optical near-field imprint lithography |
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Authors: | T. Yatsui Y. Nakajima W. Nomura M. Ohtsu |
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Affiliation: | (1) Solution-Oriented Research for Science and Technology (SORST), Japan Science and Technology Agency, 687-1 Tsuruma, Machida, Tokyo 194-0004, Japan;(2) School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan |
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Abstract: | We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO2 line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO2 LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (λ=436 nm), and obtained features as narrow as 50 nm wide. PACS 81.16.Nd; 81.16.Rf |
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