Electrical and photovoltaic properties of Cd1? x Zn x S/ p -GaAs heterojunctions |
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Authors: | P Franzosi C Ghezzi and E Gombia |
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Institution: | (1) Laboratorio MASPEC del C.N.R., I-43100 Parma, Italy |
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Abstract: | Cd1−x
Zn
x
S/p-GaAs heterojunctions for solar cell applications have been prepared by growing single crystal Cd1−x
Zn
x
S epitaxial layers on (111)GaAs substrates through a vapour phase chemical transport method using the close-spaced geometry
and H2 as a transport agent. Electrical and photovoltaic properties of the heterojunctions have been investigated and discussed
in connection with the main features of the growth technique. AM1 power conversion efficiencies up to 6.2% have been measured
and possible improvements have been examined. |
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Keywords: | 68 55 84 60 85 60 |
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