Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor |
| |
| Affiliation: | 1. College of Mathematics and Systems Science, Shandong University of Science and Technology, Qingdao 266590, China;2. Key Laboratory of Meteorological Disaster (KLME), Ministry of Education & Collaborative Innovation Center on Forecast and Evaluation of Meteorological Disasters (CIC-FEMD), Nanjing University of Information Science and Technology, Nanjing 210044, China;3. School of Mathematics and Statistics, Nanjing University of Information Science and Technology, Nanjing 210044, China;1. Department of Mathematics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia;2. Mathematics Department, Faculty of Science, Taibah University, Al-Madinah Al-Munawarah, Saudi Arabia |
| |
| Abstract: | By considering that the implanted ions in a group-IV semiconductor agglomerate to form nanoclusters (NCs) and some of them acquire negative charge, we present an analytical study on excitation and propagation of Alfven wave (AW). Using multi-fluid analysis and Maxwell's equations, a linear dispersion relation for the AW in a semiconductor plasma has been derived. The presence of charged NCs is shown to split the waves into two components and significantly modifying their dispersion and absorption characteristics by creating a charge imbalance in the semiconductor plasma. The NCs, on account of their heavy masses, are assumed to be stationary in the background. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
